GaN Modeling & CAD
Abstract
GaN integrated circuit processing has matured to a point where circuit designers can begin torealize its potential for integrated RF circuits. While the manufacturing technology is maturing, theproblem for AOARD/WPAFB remains solving the challenges of measuring and extracting accurateand precise GaN models, and capturing all of GaN’s beneficial and problematic physicalcharacteristics within these models. This work aims to apply and extend the Macquarie UniversityMeerkat model, one of the leading compound semiconductor simulation models, to GaN processesto enable the realization of this potential.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 09, 2018
- Source ID
- FA23861714096
Entities
People
- Michael Heimlich
Organizations
- Air Force Office of Scientific Research
- Macquarie University
- United States Air Force