GeSn Based Near and Mid Infrared Heterostructure Detectors 1
Abstract
Building upon our prior work on GeSn photodetectors and imaging chip that respond to normal incident IR signals, we develop GeSn waveguide photodetectors that can be integrated in planar photonic circuits, enabling the so-called “optoelectronic integrated circuits.” The broad impact of this basic research project is to advance the science and technology of silicon-based photonic devices using high qualtiy GeSn material. Specifically, the GeSn waveguide photodetectors to be demonstrated is to outperform the commercially available Ge counterpart in near IR and extend its responsivity to the mid IR range, taking advantage of the fact that adding small amount of Sn into Ge will drastically increase and expand the material absorption spectrum. Such waveguide devices work in near and mid IR spectral range and form the foundation for IR photonics that enable on-chip systems for applications ranging from communications, thermal imaging, vibrational spectroscopy, chem/bio sensing, medical/health uses, to environmental monitoring. As a group-IV material system, the on-chip systems based on the GeSn material system have a crucial added advantage of being compatible with the mature CMOS processing allowing for monolithic integration of the photonics with Si electronics on a Si platform.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 09, 2018
- Source ID
- FA23861714099
Entities
People
- Hung Hsiang Cheng
Organizations
- Air Force Office of Scientific Research
- National Taiwan University
- United States Air Force