Defect-enriched electronic properties of group-IV 2D systems
Abstract
This work is focused on the defect-enriched electronic properties of group-IV 2D systems. The dependence on the type, distribution and concentration of defects and the interplay with the magnetic and electric fields are explored in detail. We will develop the generalized tight-binding model to include the defect-dependent interactions and the external fields in the Hamiltonian simultaneously. The defects might induce the valley- and spin-split electronic states, the semiconductor-semimetal transition, and the localization of wave function. They are expected to have strong effects on the magneto-electronic properties, covering the reduced Landau-level degeneracy, the unusual magnetic-field-dependent energy spectra, and the drastic change of quantum oscillation modes.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 09, 2018
- Source ID
- FA23861810120
Entities
People
- Ming-fa Lin
Organizations
- Air Force Office of Scientific Research
- National Cheng Kung University
- United States Air Force