Growth and study of optical properties of E-Ga2O3
Abstract
Ultra-wide band Ga2O3 has attracted significant attention of materials and device experts forits promise toward next generation power transistors, high-temperature electronics and deep-UV opto-electronics. Among its five polymorphs, beta phase has been more widely studied; however, epsilon phase is expected to be polar and is thus gaining traction for exploringpolarization-engineered heterostructures.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Oct 20, 2022
- Source ID
- FA23861914026
Entities
People
- Digbijoy Nath
Organizations
- Air Force Office of Scientific Research
- Indian Institute of Science, Bengaluru
- United States Air Force