Growth and study of optical properties of E Ga2O3
Abstract
Ultra wide band Ga2O3 has attracted significant attention of materials and device experts for its promise toward next generation power transistors, high temperature electronics and deep UV opto electronics. Among its five polymorphs, ? phase has been more widely studied; however, epsilon ? phase is expected to be polar and is thus gaining traction for exploring polarization engineered heterostructures.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA23861914026XX0
Entities
People
- Digbijoy Nath
Organizations
- Air Force Office of Scientific Research
- Indian Institute of Science, Bengaluru
- United States Air Force