Large area 2D heterostructures based on van der Waals epitaxy: Facile growth techniques to multifunctional nanoscale devices
Abstract
In the last decade, following the isolation of graphene, a large number of atomically thin 2D materials have emerged with a wide range of electronic properties and novel emergent phases. Owing to the reduced dimensionality, the quantum confinement in these 2D materials manifests in new phenomena such as broken symmetries, ordered states, long-lived bound excitations (excitons, trions), topological phases etc. The proposed project is aimed at developing a novel platform to engineer the growth of heterostructures based on atomically thin layered materials on a sizeable scale using the technique of van der Waals epitaxy (VDWE) and to utilize these to design nanoscale devices with multifunctionality for applications in the fields of electronics, optoelectronics and spintronics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 16, 2022
- Source ID
- FA23862114014
Entities
People
- Vidya Kochat
Organizations
- Air Force Office of Scientific Research
- Indian Institute of Technology Kharagpur
- United States Air Force