Electronic Properties of 2D Materials through (Spin-Polarized) Scanning Tunneling Spectroscopy
Abstract
Transition metal dichalcogenides (TMDs), a new class of layered two dimensional (2D) materials, has recently gained enormous interest as a promising candidate in the field of optoelectronics and spintronics. Depending on the thickness, these materials may exhibit either direct or indirect bandgaps enabling a wide range of applications. In addition, a few interesting phenomena has been recently observed in TMDs due to the presence of semiconducting band structure in the interior and metallic bands at the periphery. Such observation recommends that investigation of the band structure is an intriguing part for the future development of the field. In this direction, our aim is to investigate the band structure of a range of 2D TMDs through scanning tunneling microscopy/spectroscopy (STM/S). Such localized mode of measurements allows observation of any kind of band-bending, edge states and topological behavior at the edge/interior interface. Different spin states of the bands viz spin split valence band can also be probed through a modified version of this technique called spin-polarized STS. Moreover, for practical device application, as the built-in electric field at the interface would facilitate separation of charge carriers in devices, different band engineering at the interface can also be studied through this method.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 21, 2022
- Source ID
- FA23862114031XX0
Entities
People
- Amlan J Pal
Organizations
- Air Force Office of Scientific Research
- Indian Association for the Cultivation of Science
- United States Air Force