MATERIAL AND DEVICE ENGINEERING OF GA2O3 RF ELECTRONICS
Abstract
The ultra-wide-bandgap Ga2O3 semiconductor material shows promise as the next leap in radio frequency (RF) electronics. Despite the recent intensive pursuit of Ga2O3 RF electronics, the materials and associated device technologies are still in their infancy. The proposed research exploits nonconventional physics and approaches for potential payoff of significantly advancing the material and device technologies to enable next generation defense and civilian RF electronics with higher frequency and power handling capacity, which is urgently needed by the aerospace community. The proposed research is based on close collaboration between Taiwan and US teams leveraging their unique expertise in material exploration and device innovation, respectively.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 04, 2023
- Source ID
- FA23862214006
Entities
People
- Jian Li
Organizations
- Air Force Office of Scientific Research
- National Cheng Kung University
- United States Air Force