PERFORMANCE OF SIMOS QUANTUM DOT SPIN QUBITS AT ELEVATED TEMPERATURES
Abstract
This project focuses on demonstration of multi-qubit logic based on spins confined in silicon metal-oxidesemiconductor (SiMOS) quantum dots (QDs) that are compatible with today’s Si CMOS manufacturing, offering the long-term prospect of large-scale quantum processors integrating millions of qubits. In addition to the long coherence times available in enriched Si-28, SiMOS QD qubits possess a large valley splitting, mitigating qubit leakage present in other systems. Our team have shown that SiMOS QDs can be conveniently exchange coupled in a way that suits extensibility based on a linear array of QDs, with 1-qubit control enabled via electron spin resonance (ESR) pulses, and 2-qubit gates via exchange coupling. Our project has aimed to characterize and understand the microscopic sources of noise affecting SiMOS QDs and develop strategies to mitigate these effects and increase fidelities to above 99.9% for 1-qubit and 99% for 2-qubit gates. It aimed to develop gate-based dispersive parity readout of pairs of qubits, to aid in future scalability. The project has targeted entangling operations on up to 4-qubit devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 20, 2023
- Source ID
- FA23862214070
Entities
People
- Henry Yang
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of New South Wales