Wafer-scale Group IV (Si, Ge, and Sn) single layer for Angstrom generation electronic devices

Abstract

Group IV elements such as silicon and germanium have been miracle materials for the electronics industry that drives the digital revolution. The rapid miniaturization of device sizes in accordance to the Moore’s law has yielded an ever-increasing density of fast components integrated on Si chips, pushing down feature size close to its ultimate physical limits from micron to the nanometer scale. In addition to optimization of structure for improving the performance of the device, the monolayer group IV channel provides several promising characteristics for next generation CMOS electronics. The key issue for the successful implementation of these monolayer structures depends on the bandgap and carrier mobility of the materials required for the operation in CMOS devices. (We focus on the two key characteristics of the monolayer in the discussion.) To resolve the issue, two types of new structures are provided aiming at a high-performance channel for CMOS devices. The first type of structure is a hybrid semiconductor structure built on a monolayer Si and Ge material on the Sn buffer III-V substrate. (Hybrid structure refers to group IV on III-V substrate. The layer thickness of the tin ranges from monolayer to a few monolayers.) The second type of device structure is a homogenous group IV structure developed based on the monolayer group IV materials of Si and Ge on tin buffer Ge (111) substrate. Several key perspectives (such as bandgap and Fermi level of the group IV monolayer) are discussed in this proposal, providing a platform for the practical application of group IV two-dimensional material for CMOS devices. If this is achieved, it would have a great impact to the present group IV based electronic industry.

Document Details

Document Type
DoD Grant Award
Publication Date
Feb 16, 2024
Source ID
FA23862314041

Entities

People

  • Hung Cheng

Organizations

  • Air Force Office of Scientific Research
  • National Taiwan University
  • United States Air Force

Tags

Readers

  • Computer Science.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics