Group IV material GeSn with tunable bandgap for mid-infrared sensing

Abstract

Photodetectors are widely used in our daily life for various purposes, such as taking a photo (device in our cellphone) and fiber-optic communications. To enrich our life and benefit society, focus has been placed on the performance and broadening the functionality of the detector. In this project, a new type of planar GeSn-based photodetector will be developed by a structural design and a foundry compatible innovated fabrication technique. This detector operates at infrared region that could have a higher performance and a broad detection range than conventional Ge photodetectors. This work advances the group IV detection capability and impacts infrared technologies needed in different areas, such as communications and medical-health applications.

Document Details

Document Type
DoD Grant Award
Publication Date
Feb 16, 2024
Source ID
FA23862314074

Entities

People

  • Hung Cheng

Organizations

  • Air Force Office of Scientific Research
  • National Taiwan University
  • United States Air Force

Tags

Fields of Study

  • Materials science

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