High-power NIR and MIR semiconductor lasers based on topological photonic-crystal vertical-cavity
Abstract
High-power semiconductor diode lasers are used to pump fibre lasers for continuous-wave (cw) directed energy applications. In a cascade pumping scheme, a 793 nm diode lasers pumps Tm doped fibre which then pumps Ho doped fibre at 1.9 microm for high power lasing at 2.1 microm. In current designs, the edge emitting diode lasers have poor optical mode properties, making them inefficient for coupling into fibre. Using the University of Adelaide’s world-class crystal growth, fabrication, and characterisation facilities established through the AUS Defence Science and Technology Group (DSTG), and Yale University’s well-established expertise in laser design, modelling and fundamental optical characterisation, we proposal a novel vertical-cavity laser approach using topological element (ordered triangular holes) to produce large area, single-mode, high-power lasers with excellent beam quality. In addition, these laser designs could produce fibre pump lasers with significantly higher output power than traditional edge-emitting diode lasers. To provide flexibility in fabrication and thermal management, we will investigate phase coupling ensembles of smaller vertical cavity devices. Initial vertical cavity simulations and fabrication will target 793 nm on GaAs, while later efforts will include 1.9 and 2.1 microm wavelengths which will be compatible with the University of Adelaide’s new GaSb-based crystal growth and fabrication process.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 22, 2024
- Source ID
- FA23862314120
Entities
People
- Glenn S. Solomon
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Adelaide