HfO2 - based ferroelectrics for low power memory application
Abstract
The exponential growth in global data storage demand necessitates innovative memory and storage technologies to accommodate the ongoing data explosion efficiently. Ferroelectric memory technology, particularly the discovery of ferroelectricity in hafnium oxide (HfO2) thin films, presents a promising solution due to its complementary metal-oxide-semiconductor (CMOS) compatibility and robust electric dipoles at nanoscale thicknesses. However, while these films exhibit desirable properties such as high retention polarization (Pr), their coercive field (Ec) remains high, leading to elevated operating voltages and compromised endurance performance. To address this challenge, this study aims to investigate the effect of thickness on Ec in CMOS-compatible FE HfO2 and HZO thin films, considering strain and surface energy effects. The project will leverage strain engineering, interface engineering, elemental doping, and phase composition variation to achieve thin films with low Ec, high Pr, high endurance (>109 cycles), and low thickness (<10 nm). By systematically exploring the interplay between film thickness, composition, and microstructure, the study seeks to understand fundamental mechanisms governing the ferroelectric properties of these materials. By fabricating ferroelectric capacitors and analyzing thickness-dependent ferroelectric parameters, mechanisms for achieving lower Ec, operating voltage, and enhanced endurance characteristics will be studied. Additionally, synergistic theoretical calculations and simulations will complement experimental efforts. This research contributes to the development of low-power ferroelectric memory devices by advancing our understanding of thin film ferroelectric properties and facilitating the design of innovative materials and devices for future data storage applications. Ultimately, the outcomes of this study hold significant implications for the realization of next-generation data storage solutions capable of meeting the evolving demands of the digital era.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 05, 2025
- Source ID
- FA23862414027
Entities
People
- Shikhar Misra
Organizations
- Air Force Office of Scientific Research
- Indian Institute of Technology Kanpur
- United States Air Force