Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors
Abstract
The objective of this project is to develop comprehensive electromagnetic thermal simulation tools for the thermal design of GaN-on-SiC high electron mobility transistors which incorporate unprecedented detail of electron phonon interactions and frequency dependent phonon transport processes.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 29, 2016
- Source ID
- FA86501517523
Entities
People
- Qing Hao
Organizations
- Air Force Research Laboratory
- Defense Advanced Research Projects Agency
- University of Arizona