MOVPE grown (AlxGa1-x)2)O3 Layers on (010) ?-Ga2O3 Substrates for lateral power devices - From material research to device -
Abstract
Although immense process in homoepitaxial thin film growth of ?-Ga2O3 on different substrate orientations has been achieved in recent years, ?-Ga2O3 based high-efficiency devices are still limited by the materials’ intrinsic low thermal conductivity and electron mobility. Increasing the bandgap from 4.5-4.9 eV (x = 0) to 8.8 eV (x = 1) by alloying ?-Ga2O3 with Aluminum opens up the possibility to overcome the materials’ restraints and realize highperformance lateral ?-(AlxGa1-x)2O3/Ga2O3 heterostructure devices. The high theoretically predicted critical field strength of 16 MV/cm for ?-(AlxGa1-x)2O3 layers with x = 0.8 (bandgap 6.5 eV) enables the fabrication of modulation doped field effect transistors (MODFETs) with miniaturized device scaling. Modulation doping of the ?-(AlxGa1-x)2O3 barrier layer in ?-(AlxGa1- x)2O3/Ga2O3 heterostructure field effect transistors (FETs) is predicted to show a significant enhancement in the device performance compared to conventional ?-Ga2O3 based devices. This Project aims for Ga2O3/?-(AlxGa1_x)2O3 structures grown by MOVPE on (010) Ga2O3 substrates with high incorporation of Aluminum. To achieve this the group will follow two approaches: i) Investigate and develop the fundamental growth parameters ii) Apply a new growth surface to investigate the epitaxial growth on it with the aim to achieve step flow growth on (010) and to avoid rotational domains which limits the incorporation of Aluminum. The afterwards achieved high quality layer will act in the second part of the project as the base for further development towards optimized high power lateral device structures based on multiple ?-Ga2O3/?-(AlxGa1_x)2O3 structures and to generate 2DEG’s with the final project goal to produce high performance ?-(AlxGa1_x)2O3 MOSFETS.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 20, 2023
- Source ID
- FA86552217042
Entities
People
- Andreas Popp
Organizations
- Air Force Office of Scientific Research
- Forschungsverbund Berlin
- United States Air Force