Exploring optical cavities based on gallium oxide nanomaterials

Abstract

Gallium oxide, Ga2O3, has recently appeared as the leader of the ultra-wide band gap semiconductors, with the aim to overcome the limitations and materials costs and processing of the opto-electronic technology. The research on this oxide has been boosted by showing very promising applications as power converters, wireless charging systems or UV optoelectronic devices. Although much knowledge has been gained recently on the optical behavior of Ga2O3 and the influence of the growth conditions, dopants, etc. on it, there is still lack of fundamental research regarding some light-matter interaction effects in Ga2O3,micro and nanostructures. In this project the team will investigate and study the generation and confinement of light in novel layouts of Ga2O3 nanomaterials that include several low dimensional systems (1D and 2D) with the aim at exploring novel optical cavities. The results will be of crucial importance to exploit the optical properties in future quantum photonic devices

Document Details

Document Type
DoD Grant Award
Publication Date
Feb 22, 2024
Source ID
FA86552317002

Entities

People

  • Bianchi Mendez

Organizations

  • Air Force Office of Scientific Research
  • Complutense University of Madrid
  • United States Air Force

Tags

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing