Growth of Sb-based alloys on InP substrates for Photonics-Photodetection using MOCVD
Abstract
In a three year period, the growth of Sb-based alloys on an InP substrate for realizing avalanche photodiodes (APDs) using MOCVD is investigated. As lattice matched alloys, ternary and quaternary Sb-based III-V materials have the potential to complement the InP material platform. Regarding the covering wavelength range, but also in terms of high mobility and its impact ionization coefficients, Sb-based alloys as GaAs0.51Sb0.49, AlAs0.56Sb0.44 or AlGaAsSb, can extend the functionality of InP photonics and electronics. While GaAsSb is a promising material as an absorbing region for photodiodes or in DHBT due to its high electron mobility, the ternary AlAsSb has a wide band-gap showing high asymmetric ionization coefficient, suitable as a multiplication layer in avalanche photodiodes. While GaAsSb on InP is proved to be compatible for growth using MOCVD, demonstrated AlAsSb and AlGaAsSb based avalanche photodiodes are commonly based on MBE growth. By implementing the growth of Sb-based ternary and quaternary alloys with a low defect density, low noise avalanche photodiodes, but also photodiodes for longer wavelengths greater than 2 µm and other photonic components will be enabled.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 22, 2024
- Source ID
- FA86552317042
Entities
People
- Patrick Runge
Organizations
- Air Force Office of Scientific Research
- United States Air Force