Probing charge-transfer neutralization reactions in atmospheric plasmas using the ion storage facility DESIREE.
Abstract
Lack of suppliers and obsolete manufacturing processes prevent the wide spread of the SOS technology. This project proposes a new SOS diode production method based on ion implantation, optimizing structure for three operation modes- ns opening switch, sub-ns opening switch, and sub-ns closing switch. A new versatile solid-state switch for pulsed power applications will be developed. New SOS diodes will be tested under parameters typical for the directed energy applications- voltage 300 kV, current 3 kA, rise time 10-20 ns, and PRF up to 1 kHz. Various pulse shaping methods will be studied to obtain sub-ns rise times. The factors limiting the pulse rise time and PRF will be identified. Advanced semiconductor switches in the SOS pumping circuit would enhance compactness and increase efficiency, making it more attractive for defense and civil applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 05, 2025
- Source ID
- FA86552417004
Entities
People
- Richard D Thomas
Organizations
- Air Force Office of Scientific Research
- Stockholm University
- United States Air Force