Asymmetric light transport based on Parity-Time symmetry breaking of reflectionless modes
Abstract
The project includes the following phases. Phase I. Develop the SOS diode production technology using ion implantation. SOS diode prototyping, doping profile analysis using secondary ion mass spectrometry. Assembly of SOS diode arrays rated for 300 kV. Phase II. Design an SOS generator with a GW peak power and nanosecond rise time. Testing it in the single pulse and repetitive mode on a resistive load. Comparative study of the SOS diodes made by diffusion and ion implantation technology. Phase III. Develop subnanosecond sharpening circuits based on SOS diodes, silicon avalanche sharpeners, and non-linear transmission lines. Determine rise time and PRF limits, evaluate the system s lifetime.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 05, 2025
- Source ID
- FA86552417005
Entities
People
- Francesco Riboli
Organizations
- Air Force Office of Scientific Research
- United States Air Force