Battery Recharging Device Using Alpha-Electric Power Source
Abstract
Idaho State University Grant #: FA9453-15-1-0001 “Battery Recharging Device Using Alpha-Electric Power Source” Abstract For the first time ever, large single crystals of actinide oxide materials (including uranium oxides) have been fabricated using a new Idaho State University (ISU) proprietary process. These new robust semiconductor materials are capable of withstanding extreme temperatures. This ground-breaking fabrication and development capability opens up many new frontiers, including a new alpha-electric power source called the ISU NanoRad Power Pack. Large volume actinide oxide-based semiconductors can be fabricated using an ISU-developed breakthrough technique that produces bulk mono-crystalline actinide oxide solids in large 1-2 inch diameter ingots. The technique has been developed and demonstrated at ISU using cerium oxide and uranium oxide. One of the novel characteristics of ISU s actinide oxide semiconductors is that their semiconductor properties can be created and customized through control of oxygen stoichiometry in the epitaxial layers. Starting with pure crystalline substrates, semiconductor devices can be fabricated by metal organic chemical vapor deposition (MOCVD) of the N-type and P-type layered actinide oxide materials through regulation of oxygen stoichiometry in the intrinsic actinide oxide material. ISU is currently operating the world s only MOCVD tool growing actinide oxide semiconductors. This process has been demonstrated at ISU using cerium oxide and zinc oxide. The careful regulation of oxygen stoichiometry during fabrication produces semiconductors that may provide significantly elevated radiation and thermal tolerance compared to other semiconductor materials that use dopant atoms to achieve semiconductor behavior. Since the semiconductor N-type and P-type characteristics are accomplished through regulation of oxygen stoichiometry rather than inclusion of dopant atoms, there are no N-type dopant atoms or P-type dopant atoms to diffuse through the junction under thermal gradients in the diode. This may allow these units to operate at considerably higher temperatures than current semiconductor materials based on silicon and other 111-V, III-N, II-VI, and 11-0 semiconductor materials.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 15, 2016
- Source ID
- FA94531510001
Entities
People
- Eric Burgett
Organizations
- Air Force Research Laboratory
- Idaho State University
- United States Air Force