Atomistic and Meso-Scale Simulations for Multi-Timescale Theory for Radiation Degradation in Electronic and Optoelectronic Devices
Abstract
University of Michigan Grant #: FA9453-15-1-0084 “Atomistic and Meso-Scale Simulations for Multi- Timescale Theory for Radiation Degradation in Electronic and Optoelectronic Devices” Abstract Understanding the basics of ion-solid interaction and irradiation damage has led to significant developments in state-of-the-art atomic-level, kinetic Monte Carlo and meso-scale simulations, and these simulations have dramatically advanced the knowledge of defect and defect processes in a number of materials, ranging from metals to semiconductors to insulators. The III-V direct semiconductors, such as Gallium arsenide (GaAs), have received considerable attention due to its potential usefulness in high-power space-energy systems and special space-probe applications. However, space radiation damage to the III-V direct semiconductors may be a limiting factor on interplanetary missions unless sufficient shielding is provided to keep damage levels under acceptable limits. Consequently, radiation damage studies have been made experimentally on the effects of electron, and proton and neutron irradiation, including defect production and annealing, as well as effects on the performance of electronic devices based on the III-V direct semiconductors. Determining accurate damage levels and improving the NIEL model have been an ongoing focus of the Space Radiation Effects Community (SREC). In light of this, we will develop a multi-scale approach to simulate defect production, defect clustering and disordering, as well as initial kinetic energy density, and explored a new model of energy partition function, which is then used to calculate the NIEL in electronic devices. This project is going to develop atomic- and meso-scale computational framework to study defect behavior and devolutions in compound semiconductors, including ultrafast displacement cascade, intermediate defect stabilization and cluster formation, as well as slow defect reaction and migration. The fundamental mechanisms and knowledge gained from atomic- and meso-scale simulations will be used as inputs for rate-diffusion theory as initial conditions to calculate the steady-state distribution of point defects in a mesoscopic layered-structured system, thus allowing the development of a multi-timescale theory to study radiation degradation in electronic and optoelectronic devices. The long term goal is developing a fundamental understanding of defects and defect processes in compound semiconductors, including defect/property relationships, the effects of defects on transport processes, the aggregation of defects to form complex nanostructures, and the development of predictive models of behavior to predict the degradation of electronic and optoelectronic devices, i.e., carrier-momentum relaxation time, defect-assisted non-radiative recombination, defect-assisted tunneling of electrons and defect Raman scattering.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 18, 2016
- Source ID
- FA94531510084
Entities
People
- Fei Gao
Organizations
- Air Force Research Laboratory
- United States Air Force
- University of Michigan