Terahertz transistors based on hot electron transport in III-Nitrides and Zinc Oxide

Abstract

The objective is to design, build, and characterize an ultra-short channel device that exploits ballistic transport of electrons. The project takes a design-oriented approach to exploiting the unique features of reciprocal space for III-Nitrides and ZnO, materials that exhibit large intervalley separation. The proposed devices use hot electron transport in these materials with large k-window to achieve high power and high frequency performance.

Document Details

Document Type
DoD Grant Award
Publication Date
Mar 23, 2016
Source ID
FA95501510082

Entities

People

  • Srabanti Chowdhury

Organizations

  • Air Force Office of Scientific Research
  • Arizona State University
  • United States Air Force

Tags

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space