Reduction of Recombination Lifetime and Intracavity Photon-Assisted Tunneling toward THz Modulation of a Semiconductor Laser

Abstract

The project will establish a theoretical framework for pushing the modulation speed of transistor lasers (TLs) to the terahertz range. The TL epitaxial will be designed and optimized for a voltage-modulated, quantum structure with a 5 ps recombination lifetime and modulation bandwidth > 150 GHz and a TL up-converting mixer for modulation frequency of at least 0.3 THz. A theoretical framework for THz modulation will be formulated based on measured data.

Document Details

Document Type
DoD Grant Award
Publication Date
Mar 23, 2016
Source ID
FA95501510122

Entities

People

  • Milton Feng

Organizations

  • Air Force Office of Scientific Research
  • United States Air Force
  • University of Illinois Urbana–Champaign

Tags

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing