Directing Electron Flow and Intermediate Species to Catalytically Active Sites in Engineered Metal/Semiconductor Nanostructures
Abstract
The goal of this work is to use engineered metal/semiconductor nanostructures to control energy transfer and catalytic reaction for energy related processes. The nanostructures will direct the flow of electrons to catalytically active sites through built in fields, arising from a pn-junction formed between the III-V compound semiconductor and TiO2 passivation layer to improve the photocatalytic efficiency. These structures will also enable the control of the adsorption/desorption kinetics of reactants, intermediates, and products to ensure that a high density of intermediates are present at the catalytically active sites. based on TiO2-passivated III-V compound semiconductors (i.e., GaP, InP, GaAs) to control the flow of electrons and intermediate species to catalytically active sites
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 23, 2016
- Source ID
- FA95501510184
Entities
People
- Stephen B Cronin
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Southern California