Modulation-Doped Heterovalent Structures for High-Speed Electronic Device Applications
Abstract
This proposal focuses on study and demonstration of modulation-doped heterovalent structures and their feasibility for high-speed electronic devices. Lattice-matched semiconductors in the II-VI (BeMgZnCd)(SeTe) and III-V (InGaAl)(AsPSbBi) systems will allow for creating heterostructures with direct band gaps covering an energy spectrum from far IR (~0 eV) to UV (~3.4 eV), very high electron and hole mobilities, and similar thermal-expansion coefficients. The goal is to design, fabricate, and characterize a range of structures and then, through appropriate choice of compounds and layer thicknesses, to produce properties of interest for various applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 23, 2016
- Source ID
- FA95501510196
Entities
People
- Yong-hang Zhang
Organizations
- Air Force Office of Scientific Research
- Arizona State University
- United States Air Force