Development of electrical detection and control of magnetization in antiferromagnetic materials
Abstract
The objective of the project is to develop new materials and heterostructure devices where free carriers can be induced into an antiferromagnetic (AF) semiconductor by means of electrostatic gating. Such materials should be able to operate efficiently at THz frequencies. Coupled metal-insulator and magnetic transitions should introduce additional degrees of multifunctionality.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 23, 2016
- Source ID
- FA95501510219
Entities
People
- Leonid Rokhinson
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Virginia