2D/3D Heterojunction Bipolar Transistors
Abstract
The objective of this project is to demonstrate heterojunction bipolar transistors with a narrow band gap 2-D layered semiconductor (MoS2) base and a wide band gap GaN collector for high frequency high power applications. If successful, this research could enable a new class of GaN high frequency transistors in the THz range with unprecedented power-frequency product. It would also provide technological and scientific framework for synthesis and device engineering of a new class of 2-D/3-D heterojunction devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 23, 2016
- Source ID
- FA95501510294
Entities
People
- Siddharth Rajan
Organizations
- Air Force Office of Scientific Research
- Ohio State University
- United States Air Force