Sub fJ/bit III-V Nanopillar Optical Link
Abstract
This proposal investigates a III-V nanophotonic transceiver on SOI substrates to realize an optical link with and energy-to-data ratio of < 10 fJ/bit at > 67 GHz. The III-V nanophotonic transceiver combines a directly modulated Nanopillar Array BandEdge Laser (NA-BEL) for the transmitter such that the cavity mode overlaps with an InGaAs gain region and a Plasmonically Coupled Single Nanopillar Photodiode (PC-SNP) for a high sensitivity receiver. Both laser and detector will be optimized independently and monolithically integrated on a SOI platform to realize the optical link. In terms of the NA-BEL on SOI grating substrate, a nanophotonic design will be developed for high quality factor laser using InxGa1-xAs (where x > 0.53) nanopillars. Temperature dependent photoluminescence and electroluminescence studies will be performed to characterize the feasibility of room temperature lasing operation. In terms of the PC-SNP on a waveguide, single pillar growth morphology will be investigated and the photocurrent generation of the PC-SNP with several junction configurations in the pillar. The final demonstration will be an energy efficient optical link, they will fabricate a prototype with on-chip NA-BEL and PC-SNP and demonstrate electrically driven lasing of NA-BEL and electrically biased PC-SNP.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 23, 2016
- Source ID
- FA95501510324
Entities
People
- Diana Huffaker
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of California, Los Angeles