Silicon Compatible Electrically Pumped Direct Bandgap Ge/GeSn Laser
Abstract
The main objective of this program is to develop a practical electrically injected direct bandgap germanium (Ge) and germanium/tin (Ge/Sn) laser that can be fully integrated with a silicon (Si) electronics platform. Such a device is critical for on- and off-chip optical interconnects and for the future of information processing.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 23, 2016
- Source ID
- FA95501510388
Entities
People
- Jelena Vučković
Organizations
- Air Force Office of Scientific Research
- Stanford University
- United States Air Force