Group-IV Photonic-Materials by Molecular Beam Epitaxy

Abstract

The prime objective of this work is to learn how to epitaxially grow high quality SiGeSn optoelectronic material. Secondary objectives include improving the understanding of the physics of large adatom segregation during epitaxial growth and how to maintain incorporation. Additionally, prototype optoelectronic devices will be made out of the fabricated materials.

Document Details

Document Type
DoD Grant Award
Publication Date
Mar 23, 2016
Source ID
FA95501510417

Entities

People

  • Thomas E. Vandervelde

Organizations

  • Air Force Office of Scientific Research
  • Tufts University
  • United States Air Force

Tags

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Software Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics