Inversion symmetry breaking cobaltates and vanadates for orbital FETs
Abstract
The objective of this project is to fabricate and study a new type of device, a ferroelectric field effect transistor. In this device, a ferroelectric field modulates the carrier density and hence the conductivity of the channel. Such devices hold promise for very-low-power operation because they should conduct with a high saturation velocity and should possess a long retention time for the ferroelectric switched state.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 23, 2016
- Source ID
- FA95501510472
Entities
People
- Charles Ahn
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- Yale University