Hyper-Functional Oxide Electronics Utilizing Ban+1SnnO3n+1-Based Heterostructures
Abstract
The objective of the project is to enable a new generation of hyper-functional oxide electronics by employing a recently discovered high-performance oxide semiconductor that is structurally and chemically compatible with ferroelectric and multiferroic oxides. Heterostructured devices will be based on combining a high-conductivity oxide, alloyed BaSnO3, with various oxides that have electromagnetic properties of interest.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 15, 2016
- Source ID
- FA95501610192
Entities
People
- Darrell G. Schlom
Organizations
- Air Force Office of Scientific Research
- Cornell University
- United States Air Force