Quantum Devices Based on Transition Metal Dichalcogenides
Abstract
The research objective of this proposal is to investigate the quantum electronic and optoelectronic properties of semiconducting nanodevices based on transition metal dichalcogenides (TMDs). In particular, we will incorporate TMDs into van der Waals heterostructures with metal gates above and below to define quantum dots within the TMD layer. These TMD quantum devices will allow a detailed examination of transport and optoelectronic properties of TMDs in confined geometries. Beyond illuminating basic material properties, which will inform the broader community of TMD optoelectronics research, these nanostructures will provide a route to assess whether TMD-based quantum valleytronics can become a competitive technology for solid-state quantum information processing.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 15, 2016
- Source ID
- FA95501610203
Entities
People
- Hugh Churchill
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Arkansas