Investigating Heteroepitaxy Principles And Transport Characteristics Of Vertically-Integrated Gan-On-Graphene Heterostructures

Abstract

The objectives of the project are (i) to pursue fundamental understanding of parameters that affectnucleation of semiconducting materials on 2-D single crystalline materials and (ii) to develop enabling film-growth approaches to enable single crystalline III-V semiconductors on 2-D materials, in pursuit of novel optical and electrical applications

Document Details

Document Type
DoD Grant Award
Publication Date
Dec 05, 2016
Source ID
FA95501610224

Entities

People

  • Can Bayram

Organizations

  • Air Force Office of Scientific Research
  • United States Air Force
  • University of Illinois Urbana–Champaign

Tags

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene