Improving The Understanding Of Heat And Carrier Transport In Electronic Heterostructure Devices By Propertreatment Of Boundary Effects In Wide Bandgap Structures Including Algan
Abstract
The objective is to model transport in wurtzite structured semiconductors (AlN, GaN, and AlxGaN) by solving simultaneously the known set of seven coupled differential equations that describecoupled thermal and electrical transport. Theoretical calculations will then be compared to experimentally obtained data.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Dec 05, 2016
- Source ID
- FA95501610227
Entities
People
- Mitra Dutta
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Illinois Urbana–Champaign