Tuning Metal-Insulator Transitions In Ultra-Thin Correlated Materials

Abstract

The proposal aims to study 4d and 5d transition metal oxide thin film systems on the verge of a metal-to-insulator transition (MIT): (i) to understand the mechanism underlying the metal-insulator transition in these materials; (ii) to determine the extent to which their conductivity can be tuned by external parameters; and (iii) to incorporate these materials into field-effect devices.

Document Details

Document Type
DoD Grant Award
Publication Date
Dec 05, 2016
Source ID
FA95501610235

Entities

People

  • Yuri Suzuki

Organizations

  • Air Force Office of Scientific Research
  • Stanford University
  • United States Air Force

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene