Optoelectronic Properties Of Strain-Engineered Germanium Dots
Abstract
The objective of the proposed work is to examine the growth/structure/property relations of direct band gap germanium (Ge) nanomaterials for optoelectronic applications, by combining experiment with computational modeling. This project has two goals. The first goal is to overcome a long-standing materials challenge by converting Ge into a direct band gap semiconductor. The second goal is to comprehensively understand the fundamental characteristics of this novel material down to the single nanostructure level, to enable tuning of its properties for realizing future optoelectronic applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Dec 05, 2016
- Source ID
- FA95501610278
Entities
People
- Michael Scheibner
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of California