High Performance Short Channel Field Effect Transistors Based on 2D Materials with Ohmic Contacts
Abstract
The objectives are to address design or low-resistance contacts to source and drain electrodes in field effect transistors (FETs) based on 2-D transition metal dichalcogenides. Feasibility of threefundamental approaches towards achieving low contact resistances will be determined. Ultrathin FETs containing vertically integrated TMDs and the new low-resistance contacts will be fabricated and studied.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 15, 2016
- Source ID
- FA95501610289
Entities
People
- Manishkumar Chhowalla
Organizations
- Air Force Office of Scientific Research
- Rutgers University
- United States Air Force