Investigation of Scalability and Reliability of Contacts to Two Dimensional Layered Semiconductors
Abstract
For two-dimensional (2D) semiconductors, elimination of Fermi level pinning is essential to realize low-resistance, scalable, and reliable contacts. In this project, we aim to achieve the same through metal-2D interface engineering (use of an ultra-thin and insulating h-BN layer of optimumthickness between the metal and the 2D-semiconductor) and metal-2D hybridization engineering (use of high pressure). We will characterize the metal-2D contacts under extreme operatingconditions, which includes radiation exposure and high temperatures since these are essential requirements for defense electronic devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2017
- Source ID
- FA95501710018
Entities
People
- Saptarshi Das
Organizations
- Air Force Office of Scientific Research
- Pennsylvania State University
- United States Air Force