Light-Mass-Atom Semiconductor Materials and Devices
Abstract
AlN, BN, and related materials, made of light-mass atoms, with extreme bandgaps up to 6.2 eV, attractive for DUV emitters and electronics for extreme environments. The objectives are to grow extreme-bandgap semiconductor heterostructures of Al(B,Ga)N by molecular beam epitaxy and to study in depth the structures produced. The ultimate objective is enable regimes of speed, voltage, and wavelengths for electronics and optoelectronics that are currently inaccessible.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2017
- Source ID
- FA95501710048
Entities
People
- Huili Grace Xing
Organizations
- Air Force Office of Scientific Research
- Cornell University
- United States Air Force