Study of defect levels in InAs/InAsSb superlattice mid-infrared photodetectors
Abstract
There is strong evidence of a defect level above the conduction band of InAs which allows for long carrier lifetimes for photodetectors. This project wishes to use the University of Surrey s high-pressure expertise to study selected samples of Indum Arsenide (InAs)/Gallium-indium Antimonide (GaInSb) for AFRL researcher Dr. Elizabeth Steenbergen to try and confirm the presence and position of this defect level. The samples all have differing Sb compositions and thicknesses, meaning that they have a range of optical transition wavelengths and initial band-edge to defect separations.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2017
- Source ID
- FA95501710110
Entities
People
- Stephen J Sweeney
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Surrey