Probing the Atomic Origins of Electronic States in Low Dimensional Materials Interfaces
Abstract
Recent advances in the synthesis, isolation, and manipulation of individual atomic layers has opened a new era of high quality electronic devices at molecular length scales. Devices based on two-dimensional materials have attracted intense interest because their small size enables the miniaturization of electronics as well as the creation of entirely new device technologies based on quantum physical phenomena. In systems only a few atoms thick, the location and interactions of every atom can impact device performance. A critical step in realizing the potential of molecular-scale electronics is therefore the development of methods to understand and control two-dimensional materials and their interfaces at the level of single atoms. Here, we propose to use state-of-the-art, quantitative methods in transmission electron microscopy and spectroscopy to develop a coherent framework for understanding and controlling the atomic origins of electronic states in two-dimensional materials and devices. These electron microscopy techniques will allow us to simultaneously probe local band structure, composition, and bonding with nearly single atomprecision; we will use these abilities to test new routes to design and engineer emergent properties in 2D materials through control of their phase structure and interfaces. The proposed research possesses transformative technological potential because it aims to transmute what is currently a major challenge: the ability of 2D materials to be altered by changes in local structure and environment into a honed tool to achieve new and tailored properties in molecular-scale devices. The successful completion of the proposed work will speed development of new technologies based on molecular-scale materials, advance rational design of emergent properties at materials interfaces, and have potential for discovery of novel physical phenomena. These goals tie directly into Air Force objectives that support the development of atomic-scale devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 02, 2017
- Source ID
- FA95501710213
Entities
People
- Pinshane Huang
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Illinois Urbana–Champaign