Overcoming the DX Doping Challenge in Ultra Wide Bandgap Semiconductors
Abstract
The most common donor dopants that are known to be shallow in GaN transition to deep donors in AlN. Formation of so-called DX centers is the cause. AlGaN and AlN films will be grown and DX centers will be created and studied theoretically and by electron microscopy. The effects of strain will be examined to control the DX centers.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 02, 2017
- Source ID
- FA95501710225
Entities
People
- Zlatko Sitar
Organizations
- Air Force Office of Scientific Research
- North Carolina State University
- United States Air Force