Ultra Wide Band Gap III-Nitride Semiconductor Materials and Devices
Abstract
The project focuses on developing an understanding of synthesis and electronic properties of technologically important ultrawide-bandgap III-AlGaN semiconductors. The focus is on scientific challenges and opportunities of high-Al-composition AlGaN semiconductor alloys, including thoserelated to growth, microstructure, point defects, and transport.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2017
- Source ID
- FA95501710227
Entities
People
- Siddharth Rajan
Organizations
- Air Force Office of Scientific Research
- Ohio State University
- United States Air Force