Electrically Detected Electron Nuclear Double Resonance in Solid State Electronics
Abstract
Electrically active defects limit the performance of solid state electronic devices. Fundamental physical understanding of these defects can lead to their elimination or control. Defects in wide-bandgap and ultrawide-bandgap semiconductors will be studied by techniques based electronparamagnetic resonance (EPR), including electron nuclear double resonance (ENDOR).Sensitivity of the ENDOR measurement will be improved significantly through equipment modification. Experimental data for GaN, ALN, and their alloys will be compared against theoretic predictions.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 28, 2017
- Source ID
- FA95501710242
Entities
People
- Patrick M. Lenahan
Organizations
- Air Force Office of Scientific Research
- Pennsylvania State University
- United States Air Force