Study of growth mechanism and planar defect formation in ?-(AlxGa1-x)2O3/Ga2O3 heterostructures grown by MOVPE on differently oriented ?-Ga2O3 substrates
Abstract
Monoclinic ?-Ga2O3 (4.8 eV) is a transparent semiconducting oxide with very promising perspectivesespecially in high power applications. Due to the ultra-wide band gap, extremely high field strength (8 MV/cm) and large Baliga’s figure of merit are predicted, enabling the fabrication of devices with higher breakdown voltage than their SiC and GaN counterparts. The growth on (010)-oriented substrates led to a dramatic improvement of the crystalline perfection of the layers, resulting in very high electron mobility. However, since the fabrication of (010)-oriented substrates is technologically very challenging, the present project aims to develop a reliable MOVPE process for the growth of ?-Ga2O3 and ?-(AlxGa1-x)2O3 layers with high crystalline perfection on alternative ?-Ga2O3 substrate orientations, thus taking a major step towards future ?-Ga2O3-based high power devices.During the whole project, a constant feedback on the layer properties by the TEM and electrical characterization teams at IKZ will be crucial for a successful development of the growth process. At the same time, a close cooperation with the AFRL will be maintained for the fabrication of ?-Ga2O3-based structures to validate material improvement based on scientific breakthroughs in epitaxial growth.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2017
- Source ID
- FA95501710279
Entities
People
- Günter Wagner
Organizations
- Air Force Office of Scientific Research
- Forschungsverbund Berlin
- United States Air Force