Electrically Injected Si-Ge-Sn Lasers
Abstract
The objective of this program is to develop electrically injected lasers based on Sn-containinggroup-IV alloys. The devices will be fabricated on Si(100) by taking advantage of recentsynthetic breakthroughs at ASU that made it possible to grow high-quality GeSn and GeSiSnalloys with direct band gaps, to achieve ultra-high doping by in situ methods, and to demonstrateworking light emitting diodes that represent the basic building blocks of laser structures to beinvestigated within the program.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2017
- Source ID
- FA95501710314
Entities
People
- John Kouvetakis
Organizations
- Air Force Office of Scientific Research
- Arizona State University
- United States Air Force