(DURIP) Request for Upgrading a Sulfide-Dedicated UHV CVD System for 2D Sulfide Monolayer Growth
Abstract
This proposal seeks funds to upgrade an ultrahigh-vacuum (UHV) chemical vapor deposition(CVD) system for epitaxial growth of 2-dimensional transition metal sulfide monolayers andheterostructures. Arizona State University has the only device-quality, commercial-grade, sulfur(S) dedicated UHVCVD system in the world. In this project, two metal precursors, molybdenumhexafluoride (MoF6) and titanium tetrachloride (TiCl4), will be added to make our system a one-of-a-kind system dedicated to growth of wafer-scale transition metal sulfide monolayers andheterostructures. The upgrade will enable two metal sulfides, molybdenum disulfide (MoS2) andtitanium trisulfide (TiS3). With additional research in growth conditions, the upgrade will lead tosingle-crystal, stoichiometric, self-limited monolayers of MoS2 and TiS3. The system allowsdifferent substrates for sulfide growth including quartz, sapphire, and Si(100) wafer coated with adielectric film. A unique capability of the system is that it provides a proprietary monolayer S- terminated Si(100) substrate and in-situ growth of sulfide monolayers on the novel Si surfacewithout breaking vacuum. The heterostructures enable monolithic integration of THz electronics (such as high electron mobility transistor) and light sources (such as light-emitting diode and laser) with Si complementary metal-oxide-semiconductor field-effect transistors.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 28, 2017
- Source ID
- FA95501710322
Entities
People
- Meng Tao
Organizations
- Air Force Office of Scientific Research
- Arizona State University
- United States Air Force