Room temperature continuous wave SiGeSn/GeSn quantum well lasers monolithically integrated on Si
Abstract
Silicon-based lasers have long been desired for owing to the possibility of monolithic integrationof photonics with high-speed Si electronics and the aspiration of broadening the reach of Sitechnology by expanding its functionalities well beyond electronics. To overcome the intrinsicproblem of band gap indirectness in the group-IV semiconductors of Si, Ge, and SiGe alloys, anew group-IV material system (SiGeSn) that expands beyond the SiGe alloys has beensuccessfully demonstrated. In particular, direct band gap GeSn alloys have been investigated asactive materials for lasers on Si substrates. While there remains significant challenges in growthof SiGeSn materials, device quality epilayers with a wide range of alloy compositions have beenachieved, which have led to the demonstration of GeSn lasers. The goal of this project is toanswer a fundamental question: Would GeSn based lasers ever be able to be used as the lightsource for Si photonic integration? A well-integrated research plan is proposed in the project,which includes the following four tasks: i) Developing high Sn composition GeSn, SiGeSn andtheir heterostructures to grow high Sn composition GeSn alloy, grow high Sn compositionSiGeSn alloy, to develop type-I Direct bandgap SiGeSn/GeSn quantum wells (QWs) with strongelectron confinement; ii) Material characterization of SiGeSn optical properties for laser design, optical characterization of heterostructure including QWs, quantitative analysis for spontaneous emission quantum efficiency and band alignment; iii) Developing optically pumped GeSn lasers including a new generation bulk lasers, multiple QW lasers, and also conducting detailed optically pumping laser modeling/characterization; iv) Developing electrically pumped SiGeSn/GeSn lasers through developing electrically injected surface emitting light emitting diodes and developing electrically injected edge emitting lasers.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 11, 2018
- Source ID
- FA95501810045
Entities
People
- Shui-Qing Yu
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Arkansas