Extreme Nonlinearity in Transition Metal Oxides
Abstract
A recent discovery of growth methods that allow for growing transition metal oxides or TMOs directly on Si, created revolutionary opportunities in silicon photonics, a hybrid technology combining semiconductor logic with optical information technologies. In the figure we compare the EO effect in several transition metal oxides with other materials. Recently, the electro-optical properties of BTO films epitaxially grown on silicon have been reported. The effective EO coefficient was found to be five times larger than in the current industry standard material LiNbO3. UT Austin aim to exceed these results by developing new materials with even larger intrinsic Pockels coefficients. Such integration of highly electro-optically active films with silicon chips paves the way towards power-efficient, ultra-compact integrated devices, such as interconnects, modulators, tuning elements and bi-stable switches, all of which have defense applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 09, 2018
- Source ID
- FA95501810053
Entities
People
- Alexander A Demkov
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Texas at Austin